The helium ion microscope for interconnect material imaging

Author

Thompson, William ; Ogawa, Shinichi ; Stern, Lewis ; Scipioni, Larry ; Notte, John

Author_Institution

ALIS Div., Carl Zeiss SMT, Peabody, MA, USA

fYear

2009

fDate

18-22 Oct. 2009

Firstpage

136

Lastpage

137

Abstract

The recently developed helium ion microscope (HIM) can be operated in three imaging modes; ion induced secondary electron (SE) mode, Rutherford Backscatter imaging (RBI) mode, and scanning transmission ion imaging (STIM) mode. When low k dielectric or copper interconnects are imaged in these modes, it was found that unique pattern dimension and fidelity information at sub-nanometer resolution is available for the first time. Our talk will discuss the helium ion microscope architecture and the imaging modes that may make it a tool of particular value to the low-k dielectric and dual damascene copper interconnect technology.

Keywords

Rutherford backscattering; carbon compounds; copper; helium ions; interconnections; ion microscopy; low-k dielectric thin films; scanning-transmission electron microscopy; silicon compounds; Cu; Rutherford Backscatter imaging mode; SiCOH; copper interconnects; fidelity information; helium ion microscope; interconnect material imaging; interconnect material imaging mode; low k dielectric interconnects; pattern dimension; scanning transmission ion imaging mode; subnanometer resolution; Copper; Dielectric materials; Health information management; Helium; High-resolution imaging; Image resolution; Scanning electron microscopy; Shape; Transmission electron microscopy; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Reliability Workshop Final Report, 2009. IRW '09. IEEE International

Conference_Location

S. Lake Tahoe, CA

ISSN

1930-8841

Print_ISBN

978-1-4244-3921-8

Electronic_ISBN

1930-8841

Type

conf

DOI

10.1109/IRWS.2009.5383014

Filename

5383014