Gate oxide integrity by initial gate current

A new and accurate approach to gate oxide reliability measurements for the determination of the gate oxide quality and lifetime estimation on MOSFET is presented. An accurate gate oxide thickness calculation by gate current provides oxide thickness variations better than conventional CV measurement. A gate oxide quality by gate current analysis is well correlated to the time dependent dielectric breakdown (TDDB) method. The results present that oxide lifetime is better at lower gate current in same oxide thickness where device process is same but different fabrication facilities (FAB).