Simulation of statistical aspects of reliability in nano CMOS transistors

Author

Bukhori, Muhammad Faiz ; Brown, Andrew R. ; Roy, Scott ; Asenov, Asen

Author_Institution

Dept. of Electron. & Electr. Eng., Univ. of Glasgow, Glasgow, UK

fYear

2009

fDate

18-22 Oct. 2009

Firstpage

82

Lastpage

85

Abstract

The evolution of the threshold voltage distribution in an ensemble of realistic n- and p- channel bulk MOSFETs caused by charge trapping on stress generated defect states at the Si/SiO₂ interface due to NBTI/PBTI is studied using 3-D statistical simulations. The simulations take into account the underlying random discrete dopant distribution in the transistors, which in conjunction with strategically positioned traps, could result in rare but dramatic changes in the transistor characteristics.

Keywords

CMOS integrated circuits; MOSFET; semiconductor device reliability; statistical analysis; 3-D statistical simulations; NBTI/PBTI; charge trapping; n-channel bulk MOSFET; nano CMOS transistors reliability; p-channel bulk MOSFET; random discrete dopant distribution; statistical aspects simulation; threshold voltage distribution; Degradation; Electron traps; MOSFETs; Niobium compounds; Semiconductor device modeling; Solid modeling; Statistical distributions; Threshold voltage; Titanium compounds; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Reliability Workshop Final Report, 2009. IRW '09. IEEE International

Conference_Location

S. Lake Tahoe, CA

ISSN

1930-8841

Print_ISBN

978-1-4244-3921-8

Electronic_ISBN

1930-8841

Type

conf

DOI

10.1109/IRWS.2009.5383028

Filename

5383028