Title :
Performance and reliability of sub-100 nm MOSFETs with ultra thin direct tunneling gate oxides
Author :
Qi Xiang ; Yeap, G. ; Bang, D. ; Miryeong Song ; Ahmed, K. ; Ibok, E. ; Ming-Ren Lin
Author_Institution :
Technol. Dev. Group, Adv. Micro Devices Inc., Sunnyvale, CA, USA
Abstract :
In this paper, we report the performance and reliability of sub-100 nm MOSFETs with ultra thin direct tunneling (DT) gate oxides. Both pure oxides and nitrided oxides down to 17 Å were investigated. For a L/sub g/ of about 90 nm (L/sub eff/ of about 50 nm), a drive current of larger than 1.0 mA/μm and a transconductance of higher than 800 mS/mm were obtained at room temperature. Channel electron transport properties were investigated. High field mobility degradation with decrease of oxide thickness and subsequent improvement with use of nitrided oxides were observed. Reliability characteristics such as gate leakage, stress-induced-leakage, and hot-carrier degradation are described. A new mechanical stress induced leakage phenomenon for ultra thin DT oxides was revealed.
Keywords :
MOS integrated circuits; MOSFET; VLSI; carrier mobility; dielectric thin films; high field effects; hot carriers; integrated circuit reliability; leakage currents; semiconductor device reliability; tunnelling; 17 A; 800 mS; 90 nm; channel electron transport properties; direct tunneling gate oxides; gate leakage; high field mobility degradation; hot-carrier degradation; mechanical stress induced leakage phenomenon; nitrided oxides; oxide thickness; pure oxides; reliability; stress-induced-leakage; sub-100 nm MOSFETs; transconductance; ultra thin gate oxides; Degradation; Fabrication; Gate leakage; Hot carriers; Human computer interaction; Leakage current; MOS devices; MOSFETs; Stress; Tunneling;
Conference_Titel :
VLSI Technology, 1998. Digest of Technical Papers. 1998 Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-4770-6
DOI :
10.1109/VLSIT.1998.689240
