• DocumentCode
    3144063
  • Title

    Development of the GaAs solar cell for space application

  • Author

    Mingbo, Chen ; Zhongwei, Zhang

  • Author_Institution
    Shanghai Inst. of Space Power-Sources, China
  • fYear
    1996
  • fDate
    13-17 May 1996
  • Firstpage
    121
  • Lastpage
    124
  • Abstract
    To meet the requirements of space power use, the authors developed a new multiwafer LPE technique. This technique applied a squeezing multiwafer graphite boat, with 50 wafers (2.3×2.3 cm2) or 20 wafers (2.3× 4.3 cm2) produced at each epitaxial growth. They focused on the control technique for the epitaxial layers´ parameters. Experimental results demonstrated that epitaxial growth at low temperature could produce ideal GaAs solar cells with good repeatability. To date, the efficiencies of GaAs solar cells prepared by this technique have reached 18.6% (2×2 cm2, AMO) and 18.39% (2×4 cm2, AMO), respectively. Average efficiency of the cells prepared in a small lot is 17.5% (AMO), and all the samples were qualified in space environment simulation tests
  • Keywords
    III-V semiconductors; aerospace testing; gallium arsenide; liquid phase epitaxial growth; photovoltaic power systems; semiconductor device testing; semiconductor growth; solar cells; space vehicle power plants; 17.5 percent; 18.39 percent; 18.6 percent; GaAs; epitaxial growth; epitaxial layer parameters; multiwafer LPE technique; repeatability; semiconductor; space environment simulation tests; space power solar cell; squeezing multiwafer graphite boat; Boats; Buffer layers; Electrodes; Epitaxial growth; Gallium arsenide; Photovoltaic cells; Stability; Substrates; Temperature; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE
  • Conference_Location
    Washington, DC
  • ISSN
    0160-8371
  • Print_ISBN
    0-7803-3166-4
  • Type

    conf

  • DOI
    10.1109/PVSC.1996.563962
  • Filename
    563962