DocumentCode :
3144063
Title :
Development of the GaAs solar cell for space application
Author :
Mingbo, Chen ; Zhongwei, Zhang
Author_Institution :
Shanghai Inst. of Space Power-Sources, China
fYear :
1996
fDate :
13-17 May 1996
Firstpage :
121
Lastpage :
124
Abstract :
To meet the requirements of space power use, the authors developed a new multiwafer LPE technique. This technique applied a squeezing multiwafer graphite boat, with 50 wafers (2.3×2.3 cm2) or 20 wafers (2.3× 4.3 cm2) produced at each epitaxial growth. They focused on the control technique for the epitaxial layers´ parameters. Experimental results demonstrated that epitaxial growth at low temperature could produce ideal GaAs solar cells with good repeatability. To date, the efficiencies of GaAs solar cells prepared by this technique have reached 18.6% (2×2 cm2, AMO) and 18.39% (2×4 cm2, AMO), respectively. Average efficiency of the cells prepared in a small lot is 17.5% (AMO), and all the samples were qualified in space environment simulation tests
Keywords :
III-V semiconductors; aerospace testing; gallium arsenide; liquid phase epitaxial growth; photovoltaic power systems; semiconductor device testing; semiconductor growth; solar cells; space vehicle power plants; 17.5 percent; 18.39 percent; 18.6 percent; GaAs; epitaxial growth; epitaxial layer parameters; multiwafer LPE technique; repeatability; semiconductor; space environment simulation tests; space power solar cell; squeezing multiwafer graphite boat; Boats; Buffer layers; Electrodes; Epitaxial growth; Gallium arsenide; Photovoltaic cells; Stability; Substrates; Temperature; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE
Conference_Location :
Washington, DC
ISSN :
0160-8371
Print_ISBN :
0-7803-3166-4
Type :
conf
DOI :
10.1109/PVSC.1996.563962
Filename :
563962
Link To Document :
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