Title :
New failure mechanism during high temperature storage testing and its application on SIV risk evaluation
Author :
Aubel, O. ; Yao, W. ; Meyer, M.A. ; Engelmann, H.J. ; Poppe, J. ; Feustel, F. ; Witt, C.
Author_Institution :
GLOBALFOUNDRIES Dresden Module One LLC & Co. KG, Dresden, Germany
Abstract :
In this paper, we are going to show that changes in barrier resistivity can affect the overall resistance under tests of temperatures higher then 250 °C. We conclude that a resistance increase of several tenths of percent does not necessarily come from stress induced voiding in the high temperature range but can be a result of material parameter changes.
Keywords :
circuit testing; high-temperature techniques; risk analysis; wafer level packaging; SIV risk evaluation; barrier resistivity; failure mechanism; high temperature range; high temperature storage testing; material parameter changes; stress induced voiding; Conductivity; Electrical resistance measurement; Electromigration; Failure analysis; Ovens; Packaging; System testing; Temperature distribution; Thermal stresses; Wafer scale integration;
Conference_Titel :
Integrated Reliability Workshop Final Report, 2009. IRW '09. IEEE International
Conference_Location :
S. Lake Tahoe, CA
Print_ISBN :
978-1-4244-3921-8
Electronic_ISBN :
1930-8841
DOI :
10.1109/IRWS.2009.5383044
