DocumentCode
3144321
Title
Foreword
Author
Guoqiao Tao
fYear
2009
fDate
18-22 Oct. 2009
Abstract
The final report of the 2009 International Integrated Reliability Workshop represents the final product of the many authors and volunteers who made this year´s meeting a great success. Since it began in 1982 as the Wafer Level Reliability Workshop, the meeting has maintained a character very different from most other scientific and technical meetings. Attendees are encouraged and expected to participate actively in every aspect of the Workshop, to share their own results and insights, to question speakers, to take part in the discussion groups and special interest groups. Since it began, the Workshop has maintained an atmosphere which fosters close interaction among attendees in a setting of great natural beauty with minimal distractions.
Keywords
Abstracts; Atmosphere; Electrostatic discharge; Guidelines; High-K gate dielectrics; Maintenance; Meetings; Monitoring; Niobium compounds; Titanium compounds;
fLanguage
English
Publisher
ieee
Conference_Titel
Integrated Reliability Workshop Final Report, 2009. IRW '09. IEEE International
Conference_Location
South Lake Tahoe, CA, USA
ISSN
1930-8841
Print_ISBN
978-1-4244-3921-8
Electronic_ISBN
1930-8841
Type
conf
DOI
10.1109/IRWS.2009.5383046
Filename
5383046
Link To Document