• DocumentCode
    3144321
  • Title

    Foreword

  • Author

    Guoqiao Tao

  • fYear
    2009
  • fDate
    18-22 Oct. 2009
  • Abstract
    The final report of the 2009 International Integrated Reliability Workshop represents the final product of the many authors and volunteers who made this year´s meeting a great success. Since it began in 1982 as the Wafer Level Reliability Workshop, the meeting has maintained a character very different from most other scientific and technical meetings. Attendees are encouraged and expected to participate actively in every aspect of the Workshop, to share their own results and insights, to question speakers, to take part in the discussion groups and special interest groups. Since it began, the Workshop has maintained an atmosphere which fosters close interaction among attendees in a setting of great natural beauty with minimal distractions.
  • Keywords
    Abstracts; Atmosphere; Electrostatic discharge; Guidelines; High-K gate dielectrics; Maintenance; Meetings; Monitoring; Niobium compounds; Titanium compounds;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Integrated Reliability Workshop Final Report, 2009. IRW '09. IEEE International
  • Conference_Location
    South Lake Tahoe, CA, USA
  • ISSN
    1930-8841
  • Print_ISBN
    978-1-4244-3921-8
  • Electronic_ISBN
    1930-8841
  • Type

    conf

  • DOI
    10.1109/IRWS.2009.5383046
  • Filename
    5383046