The combined photovoltaic converters based on gallium arsenide for space application

Author

Kagan, M. ; Letin, V. ; Nuller, T.

Author_Institution

State Res.-Production Enterprise, Moscow, Russia

fYear

1996

fDate

13-17 May 1996

Firstpage

129

Lastpage

131

Abstract

This paper presents results of the development as well as calculation and experimental analysis of several modifications of combined solar cells with highly efficient GaAs-based solar cell (h=18,5% at AMO, T=25°C) in the system Ga_1-xAl_xAs-pGaAs-nGaAs. This development was aimed to the generation of maximum power density when such solar cells are used on space vehicles. The next modifications of combined solar cells are presented: a symmetrical GaAlAs-GaAs cell based on p-n-p structure with two-face sensibility; a symmetrical-cascade cell in the GaAs-Si system; a symmetrical-cascade GaAs-Si-GaAs cell. As a result, the specific power of 48.5-58 mwt/cm² at AMO, 25°C has been demonstrated in an experiment in a design with two-face lighting

Keywords

III-V semiconductors; aerospace testing; gallium arsenide; photovoltaic power systems; semiconductor device models; semiconductor device testing; solar cells; space vehicle power plants; GaAlAs-GaAs; GaAlAs-GaAs-GaAs; GaAs; GaAs-Si; GaAs-Si-GaAs; GaAs-based solar cells; combined photovoltaic converters; development; maximum power density; semiconductor; space power solar cells; space vehicles; specific power; symmetrical-cascade cell; two-face lighting; two-face sensibility; Contact resistance; Equations; Gallium arsenide; Integrated circuit interconnections; Photoconductivity; Photovoltaic cells; Photovoltaic systems; Solar power generation; Surface resistance; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE

Conference_Location

Washington, DC

ISSN

0160-8371

Print_ISBN

0-7803-3166-4

Type

conf

DOI

10.1109/PVSC.1996.563964

Filename

563964