Title :
GaSb-based (thermo)photovoltaic cells with Zn diffused emitters
Author :
Bett, A.W. ; Keser, S. ; Stollwerck, G. ; Sulima, O.V. ; Wettling, W.
Author_Institution :
Fraunhofer-Inst. fur Solare Energiesyst., Freiburg, Germany
Abstract :
GaSb-based (thermo)photovoltaic cells were formed by Zn-diffusion into n-doped wafers. Two-dimensional simulations of GaSb cells varying the emitter structure and illumination conditions (AM1.5D, AM1.5D under GaAs, spectra of IR light sources) were performed. A comparison of different Zn diffusion methods showed that the diffusion from the vapor phase in a pseudo-closed-box system is the most simple, reproducible and results in the highest efficiency of the cells. An efficiency of 7.3% (AM1.5G) was achieved in a 1 cm2 photovoltaic cell, designed for tandem or thermophotovoltaic (TPV) application. Under concentrated sunlight (200-250×) a 0.13 cm2 GaSb cell reached an efficiency of 9.9%
Keywords :
III-V semiconductors; diffusion; gallium compounds; numerical analysis; photovoltaic cells; semiconductor device models; semiconductor device testing; semiconductor-metal boundaries; solar cells; zinc; 2D simulations; 7.3 percent; 9.9 percent; GaSb; GaSb solar cells; GaSb thermophotovoltaic cells; Zn; concentrated sunlight; diffused emitters; emitter structure; illumination conditions; n-doped wafers; pseudo-closed-box system; semiconductor; vapor phase diffusion; Chemical technology; Computer simulation; Etching; Large-scale systems; Light sources; Lighting; Photovoltaic cells; Production; Radiative recombination; Zinc;
Conference_Titel :
Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-3166-4
DOI :
10.1109/PVSC.1996.563965
