Current status of low-temperature radiator thermophotovoltaic devices

Author

Charache, G.W. ; Egley, J.L. ; Danielson, L.R. ; DePoy, D.M. ; Baldasaro, P.F. ; Campbell, B.C. ; Hui, S. ; Fraas, L.M. ; Wojtczuk, S.J.

Author_Institution

Lockheed Martin Inc., Schenectady, NY, USA

fYear

1996

fDate

13-17 May 1996

Firstpage

137

Lastpage

140

Abstract

The current performance status of low-temperature radiator (<1000°C) thermophotovoltaic (TPV) devices is presented. For low-temperature radiators, both power density and efficiency are equally important in designing an effective TPV system. Comparisons of 1 cm×1 cm, 0.55 eV InGaAs and InGaAsSb TPV devices are presented. Currently, InGaAs lattice-mismatched devices offer superior performance in comparison to InGaAsSb lattice-matched devices, due to the former´s long-term development for numerous optoelectronic applications. However, lattice-matched antimony-based quaternaries offer numerous potential advantages

Keywords

III-V semiconductors; gallium arsenide; indium compounds; photovoltaic cells; semiconductor device testing; solar cells; 0.55 eV; 1 cm; InGaAs; InGaAsSb; antimony-based quaternaries; efficiency; lattice-matched devices; lattice-mismatched devices; long-term development; low-temperature radiator; performance; power density; semiconductor; thermophotovoltaic devices; Filters; Indium gallium arsenide; Laboratories; Lattices; Molecular beam epitaxial growth; Photonic band gap; Plasma temperature; Semiconductor diodes; Semiconductor materials; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE

Conference_Location

Washington, DC

ISSN

0160-8371

Print_ISBN

0-7803-3166-4

Type

conf

DOI

10.1109/PVSC.1996.563966

Filename

563966