Title :
GaAs and GaSb based solar cells for concentrator and thermophotovoltaic applications
Author :
Andreev, V.M. ; Khvostikov, V.P. ; Paleeva, E.V. ; Sorokina, S.V. ; Shvarts, M.Z.
Author_Institution :
A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia
Abstract :
The paper presents the results of the development of AlGaAs/GaAs and GaSb cells, manufactured for tandem solar cells and designed for point and line-focus concentrator modules. The maximum efficiency of 23-23.6% (25°C, AM0) under 20-70 suns was achieved in the AlGaAs/GaAs infrared transparent cells with prismatic cover. The efficiency of 27.5% under AM1.5, 140 suns has been achieved. The cells based on GaSb homo-junctions, Zn-diffused structures have been developed for tandems and thermophotovoltaic (TPV) applications. AM1.5 efficiencies as high as 6.7% behind the GaAs filter for concentration ratio of 240 suns were achieved. Lattice matched p-n InGaSbAs-InGaSb heterostructures have been fabricated Zn-diffusion method. The long wavelength edge of photosensitivity of these cells is 2.15-2.2 μm
Keywords :
III-V semiconductors; aluminium compounds; antimony compounds; gallium arsenide; liquid phase epitaxial growth; p-n heterojunctions; photovoltaic cells; semiconductor epitaxial layers; semiconductor growth; semiconductor materials; semiconductor thin films; solar cells; solar energy concentrators; 2.15 to 2.2 mum; 23 to 27.5 percent; 25 C; AM0; AM1.5; AlGaAs-GaAs; AlGaAs/GaAs solar cells; GaAs filter; GaSb; GaSb homo-junctions; InGaSbAs-GaSb; Zn-diffused structures; concentrator solar cells; infrared transparent cells; lattice matched heterostructures; line-focus concentrator modules; long wavelength edge; p-n InGaSbAs-InGaSb heterostructure solar cells; photosensitivity; point-focus concentrator modules; prismatic cover; tandem solar cells; thermophotovoltaic cells; Erbium; Filters; Gallium arsenide; Lighting; Optical losses; Optical surface waves; Photovoltaic cells; Pulp manufacturing; Sun; Temperature;
Conference_Titel :
Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-3166-4
DOI :
10.1109/PVSC.1996.563968
