DocumentCode :
3145412
Title :
Wide center-tape balun for 60 GHz silicon RF ICs
Author :
Meng, Fanyi ; Yeo, Kiat Seng ; Xu, Shanshan ; Ma, Kaixue ; Lim, Chee Chong
Author_Institution :
School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore
fYear :
2011
fDate :
17-18 Nov. 2011
Firstpage :
454
Lastpage :
456
Abstract :
A monolithic transformer balun has been designed for 60 GHz applications. The balun is implemented based on GLOBALFOUNDRIES 65 nm CMOS process. Simulated amplitude and phase imbalance less than 0.1 dB and 0.34 degrees respectively over the 55–66 GHz frequency band are achieved. Insertion loss is as low as 1.22 dB at 60 GHz. The designed device has advantage of small size, low loss and excellence in output balance.
Keywords :
60 GHz; Passive Balun; RFIC design; mm-wave;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SoC Design Conference (ISOCC), 2011 International
Conference_Location :
Jeju, Korea (South)
Print_ISBN :
978-1-4577-0709-4
Electronic_ISBN :
978-1-4577-0710-0
Type :
conf
DOI :
10.1109/ISOCC.2011.6138630
Filename :
6138630
Link To Document :
بازگشت