A DC to 14GHz fully differential amplifier for wideband low power applications

Author

Kumar, Thangarasu Bharatha ; Ma, Kaixue ; Yeo, Kiat Seng ; Mou, Shouxian ; Nagarajan, Mahalingam

Author_Institution

Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore

fYear

2011

fDate

17-18 Nov. 2011

Firstpage

9

Lastpage

12

Abstract

This paper presents a high performance wideband amplifier and justifies the performance with the aid of measurement results. The amplifier consumes very low power about 6.8mW from a supply voltage of 1.8V. The amplifier is designed using a cross coupled cascode topology to improve the Gain and Bandwidth. The design is implemented in a 0.18μm SiGe BiCMOS process (ft = 200GHz) with 9.3dB small signal differential Gain and a flat 3dB Bandwidth from DC to 14GHz. The design size of the core amplifier is 230μm × 80μm.

Keywords

BiCMOS analogue integrated circuits; Ge-Si alloys; MMIC amplifiers; differential amplifiers; low-power electronics; millimetre wave amplifiers; semiconductor materials; wideband amplifiers; BiCMOS process; SiGe; cross coupled cascode topology; frequency 200 GHz; fully differential amplifier; gain 9.3 dB; power 6.8 mW; size 0.18 mum; small signal differential gain; voltage 1.8 V; wideband low power amplifier; Differential amplifier; SiGe BiCMOS process; Wideband Amplifier; low power; millimeter-wave;

fLanguage

English

Publisher

ieee

Conference_Titel

SoC Design Conference (ISOCC), 2011 International

Conference_Location

Jeju

Print_ISBN

978-1-4577-0709-4

Electronic_ISBN

978-1-4577-0710-0

Type

conf

DOI

10.1109/ISOCC.2011.6138633

Filename

6138633