DocumentCode :
3145506
Title :
30.3% PAE HBT Doherty power amplifier for 2.5∼2.7 GHz mobile WiMAX
Author :
Kang, Daehyun ; Choi, Jinsung ; Kim, Dongsu ; Yu, Daekyu ; Min, Kyougjoon ; Kim, Bumman
Author_Institution :
Dept. of Electr. Eng., Pohang Univ. of Sci. & Technol., Pohang, South Korea
fYear :
2010
fDate :
23-28 May 2010
Firstpage :
796
Lastpage :
799
Abstract :
The Doherty power amplifier for mobile WiMAX application is fully integrated in 1.2×1.2 mm2 using a 2-μm InGaP/GaAs HBT process. The direct input power dividing technique is employed on a chip. Broadband input and output matching techniques are used for broadband Doherty operation. A 1.5 times larger peaking amplifier than carrier amplifier is used to have high efficiency for IEEE 802.16e m-WiMAX signal, which has 9.6 dB crest factor and 8.75 MHz bandwidth. The PA with a supply voltage of 3.4 V has an EVM of 2.3% and a PAE of 31.5% at an output power of 24.75 dBm and an operating frequency of 2.6 GHz. The PAE of over 30.3% and the output power of over 24.6 dBm with the EVM of lower than 3.15% and the gain variation of 0.2 dB are achieved across 2.5~2.7 GHz without any assistant technique for linearization.
Keywords :
III-V semiconductors; MMIC amplifiers; UHF amplifiers; WiMax; gallium arsenide; heterojunction bipolar transistors; indium compounds; mobile radio; power amplifiers; wide band gap semiconductors; wideband amplifiers; IEEE 802.16e m-WiMAX signal; InGaP-GaAs; MMIC; PAE HBT Doherty power amplifier; bandwidth 8.75 MHz; broadband input matching techniques; broadband output matching techniques; carrier amplifier; direct input power dividing technique; efficiency 30.3 percent; frequency 2.5 GHz to 2.7 GHz; gain 0.2 dB; mobile WiMAX; peaking amplifier; size 2 mum; voltage 3.4 V; Bandwidth; Broadband amplifiers; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Impedance matching; Power amplifiers; Power generation; Voltage; WiMAX; Broadband; Doherty; MMIC; efficient; handset; hetero-junction bipolar transistors (HBT); lineaer; linear; power amplifier (PA);
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International
Conference_Location :
Anaheim, CA
ISSN :
0149-645X
Print_ISBN :
978-1-4244-6056-4
Electronic_ISBN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.2010.5517709
Filename :
5517709
Link To Document :
بازگشت