Title :
Enhanced reliability of HEMT by using a TiN barrier
Author :
Taniguchi, M. ; Amano, Y. ; Nemoto, T. ; Shinohara, K.
Author_Institution :
Nippon Mining Co. Ltd., Saitama, Japan
Abstract :
The use of Auger electron spectroscopy (AES) to explore the failure mechanism of high electron mobility transistors (HEMTs) subjected to high temperature storage (HTS) and operating life tests is discussed. Degradation at the early stage of HTS is associated with significant amounts of Ga and As outdiffusion through the ohmic areas. A TiN barrier placed between the AuGe/Ni/Au contact and the Ti/Pt/Au overlay metal is effective in eliminating this degradation and increasing the mean time to failure (MTTF) to >10/sup 8/ hours at 125 degrees C channel temperature.<>
Keywords :
Auger effect; III-V semiconductors; aluminium compounds; diffusion in solids; failure analysis; gallium arsenide; high electron mobility transistors; life testing; metallisation; reliability; semiconductor device testing; titanium compounds; 10/sup 8/ hrs; 125 degC; AuGe-Ni-Au-TiN-Ti-Pt-Au; Auger electron spectroscopy; GaAs-AlGaAs; HEMT; TiN barrier; channel temperature; degradation; diffusion barrier; failure mechanism; high temperature storage; mean time to failure; ohmic areas; operating life tests; outdiffusion; overlay metal; Degradation; Electron mobility; Failure analysis; Gold; HEMTs; High temperature superconductors; Life testing; MODFETs; Spectroscopy; Tin;
Conference_Titel :
Reliability Physics Symposium, 1990. 28th Annual Proceedings., International
Conference_Location :
New Orleans, LA, USA
DOI :
10.1109/RELPHY.1990.66068
