Title :
Radiation-resistance of InGaP solar cells
Author :
Yamaguchi, Masafumi ; Vargas-Aburto, Carlos ; Taylor, Stephen J. ; Yang, Ming-Ju ; Takamoto, Tatsuya ; Ikeda, E. ; Kurita, Hiroshi ; Ohmori, Masamichi ; Uribe, R.M. ; Brinker, D. ; Scheiman, D.A.
Author_Institution :
Toyota Technol. Inst., Nagoya, Japan
Abstract :
Irradiation effects of 1-MeV electrons in In0.5Ga0.5P (hereafter written as InGaP) space solar cells fabricated on GaAs substrates have been examined in comparison with those of GaAs and InP cells. Superior radiation-resistance of InGaP cells compared to GaAs cells has been found in terms of solar cell properties and minority-carrier diffusion length. Moreover, minority-carrier injection-enhanced annealing of radiation-induced defects in InP-related materials has also been observed
Keywords :
III-V semiconductors; annealing; carrier lifetime; crystal defects; electron beam effects; gallium arsenide; gallium compounds; indium compounds; minority carriers; photovoltaic power systems; solar cells; space vehicle power plants; substrates; 1 MeV; GaAs; GaAs substrates; In0.5Ga0.5P; In0.5Ga0.5P space solar cells; In0.5Ga0.5P-GaAs; electron irradiation effects; injection-enhanced annealing; minority-carrier diffusion length; radiation-induced defects; radiation-resistance; solar cell properties; Annealing; Chemical vapor deposition; Electron beams; Gallium arsenide; Indium phosphide; Inorganic materials; MOCVD; Photovoltaic cells; Protons; Wavelength measurement;
Conference_Titel :
Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-3166-4
DOI :
10.1109/PVSC.1996.563972
