Radiation-resistance of InGaP solar cells

Author

Yamaguchi, Masafumi ; Vargas-Aburto, Carlos ; Taylor, Stephen J. ; Yang, Ming-Ju ; Takamoto, Tatsuya ; Ikeda, E. ; Kurita, Hiroshi ; Ohmori, Masamichi ; Uribe, R.M. ; Brinker, D. ; Scheiman, D.A.

Author_Institution

Toyota Technol. Inst., Nagoya, Japan

fYear

1996

fDate

13-17 May 1996

Firstpage

163

Lastpage

166

Abstract

Irradiation effects of 1-MeV electrons in In_0.5Ga_0.5P (hereafter written as InGaP) space solar cells fabricated on GaAs substrates have been examined in comparison with those of GaAs and InP cells. Superior radiation-resistance of InGaP cells compared to GaAs cells has been found in terms of solar cell properties and minority-carrier diffusion length. Moreover, minority-carrier injection-enhanced annealing of radiation-induced defects in InP-related materials has also been observed

Keywords

III-V semiconductors; annealing; carrier lifetime; crystal defects; electron beam effects; gallium arsenide; gallium compounds; indium compounds; minority carriers; photovoltaic power systems; solar cells; space vehicle power plants; substrates; 1 MeV; GaAs; GaAs substrates; In_0.5Ga_0.5P; In_0.5Ga_0.5P space solar cells; In_0.5Ga_0.5P-GaAs; electron irradiation effects; injection-enhanced annealing; minority-carrier diffusion length; radiation-induced defects; radiation-resistance; solar cell properties; Annealing; Chemical vapor deposition; Electron beams; Gallium arsenide; Indium phosphide; Inorganic materials; MOCVD; Photovoltaic cells; Protons; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE

Conference_Location

Washington, DC

ISSN

0160-8371

Print_ISBN

0-7803-3166-4

Type

conf

DOI

10.1109/PVSC.1996.563972

Filename

563972