Title :
Comparative analysis of power bipolar devices
Author :
Busatto, G. ; Vitale, G.F. ; Ferla, G. ; Galluzzo, A. ; Melito, M.
Author_Institution :
CNR, Naples, Italy
Abstract :
A comparison between bipolar Darlington, insulated gate bipolar transistor (IGBT), bipolar mode field effect transistor (BMFET), and power MOS devices is presented based on an experimental investigation performed on devices with similar geometrical characteristics and blocking voltage capabilities. The main device characteristics (conduction characteristics, switching performances, power dissipation, power ratings, etc.) are presented and compared in order to obtain comprehensive guidelines for finding their fields of application. It is shown that, for higher frequency switching application, MOS devices are the most suitable, but they are very expensive in terms of silicon area used. For frequencies less than 20 kHZ, BMFETs have better performance than IGBTs in terms of power losses. On the other hand, the IGBT is a voltage-controlled device and thus has fewer problems with its driving circuit.<>
Keywords :
bipolar transistors; insulated gate bipolar transistors; insulated gate field effect transistors; power transistors; BMFET; IGBT; bipolar Darlington transistor; bipolar mode field effect transistor; blocking voltage; conduction characteristics; insulated gate bipolar transistor; power MOS devices; power bipolar devices; power dissipation; power losses; power ratings; switching performances; voltage-controlled device; Electric variables; Insulated gate bipolar transistors; MOSFETs; Modems; Plasma devices; Plasma sources; Power dissipation; Power engineering and energy; Silicon; Voltage control;
Conference_Titel :
Power Electronics Specialists Conference, 1990. PESC '90 Record., 21st Annual IEEE
Conference_Location :
San Antonio, TX, USA
DOI :
10.1109/PESC.1990.131183
