Title :
RSCE-aware ultra-low-voltage 40-nm CMOS circuits
Author :
Wang, Jinn-Shyan ; Chang, Keng-Jui ; Yang, Shu-Yi ; Hsieh, Tsung-Han ; Yeh, Chingwei
Author_Institution :
Dept. of Electr. Eng., Chung-Cheng Univ., Chiayi, Taiwan
Abstract :
The design techniques of 40-nm CMOS circuits utilizing the reverse short channel effect (RSCE) for ultra-low-voltage (ULV) applications were studied. We proposed methods to deploy RSCE in order to reduce active energy consumption and standby power consumption. Experimental results on 0.3V 64b adders show that the proposed RSCE-aware designs provide a 71% improvement in active energy consumption and a 68% reduction in standby power.
Keywords :
CMOS integrated circuits; energy consumption; low-power electronics; RSCE-aware ultra-low-voltage CMOS circuits; energy consumption; reverse short channel effect; size 40 nm; standby power consumption;
Conference_Titel :
SoC Design Conference (ISOCC), 2011 International
Conference_Location :
Jeju
Print_ISBN :
978-1-4577-0709-4
Electronic_ISBN :
978-1-4577-0710-0
DOI :
10.1109/ISOCC.2011.6138664
