DocumentCode
3146203
Title
Highly uniform heteroepitaxy of cobalt silicide by using Co-Ti alloy for sub-quarter micron devices
Author
Iinuma, T. ; Akutsu, H. ; Ohuchi, K. ; Miyashita, K. ; Toyoshima, Y. ; Suguro, K.
Author_Institution
Microelectron. Eng. Lab., Toshiba Corp., Yokohama, Japan
fYear
1998
fDate
9-11 June 1998
Firstpage
188
Lastpage
189
Abstract
A new technology of cobalt SALICIDE (Self-ALIgned siliCIDE) process using cobalt-titanium alloy has been developed for sub-quarter micron devices. Extremely flat and epitaxial CoSi/sub 2/ films are successfully grown on a (100) Si substrate. Improved SALICIDE process is not influenced by native oxide on a Si surface. This technology will be very useful for realizing deep sub-quarter micron devices.
Keywords
cobalt compounds; metallic epitaxial layers; metallisation; 0.25 micron; Co-Ti; CoSi/sub 2/-Si; SALICIDE process; Si(100) substrate; cobalt silicide; cobalt-titanium alloy; epitaxial film; heteroepitaxy; native oxide; self-aligned silicide; sub-quarter micron device; Cobalt alloys; Conductivity; Rough surfaces; Semiconductor films; Silicides; Silicon alloys; Sputtering; Substrates; Surface morphology; Surface roughness;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 1998. Digest of Technical Papers. 1998 Symposium on
Conference_Location
Honolulu, HI, USA
Print_ISBN
0-7803-4770-6
Type
conf
DOI
10.1109/VLSIT.1998.689251
Filename
689251
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