Title :
A versatile and cryogenic mHEMT-model including noise
Author :
Seelmann-Eggebert, Matthias ; Schäfer, Frank ; Leuther, Amulf ; Massler, Hermann
Author_Institution :
Fraunhofer IAF, Freiburg, Germany
Abstract :
A versatile scalable small signal model for high electron mobility transistors (HEMTs) of gate length 50 nm and 100 nm has been developed. The model covers a large bias range and includes the temperature dependence from 300 K to 15 K. Especially, it is capable to predict the noise behaviour of the transistor in dependence of ambient temperature and frequency.
Keywords :
high electron mobility transistors; semiconductor device models; high electron mobility transistors; mHEMT-model; size 100 nm; size 50 nm; temperature 300 K to 15 K; versatile scalable small signal model; Circuit noise; Cooling; Cryogenics; HEMTs; MODFETs; Millimeter wave technology; Noise measurement; Scattering parameters; Temperature dependence; Temperature distribution; HEMT; LNA; cryogenic amplifiers; noise modeling;
Conference_Titel :
Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4244-6056-4
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2010.5517768
