• DocumentCode
    3146716
  • Title

    Development of p/n and n/p thick emitter InP solar cells

  • Author

    Sharps, P.R. ; Timmons, M.L. ; Messenger, S.R. ; Cotal, H.L. ; Summers, G.P. ; Iles, P.A.

  • Author_Institution
    Res. Triangle Inst., Research Triangle Park, NC, USA
  • fYear
    1996
  • fDate
    13-17 May 1996
  • Firstpage
    175
  • Lastpage
    178
  • Abstract
    Both n/p and p/n InP thick emitter (0.3 μm) space solar cells with and without Ga0.5In0.5P windows are studied. Both polarity cells are considered for possible growth on Ge. While not achieving the high efficiencies of thin emitter InP cells, the thicker emitter cells may provide an advantage in radiation hardness. The Ga0.5In0.5P window has little effect on cell performance, for either polarity
  • Keywords
    III-V semiconductors; gallium compounds; indium compounds; photovoltaic power systems; semiconductor materials; solar cells; space vehicle power plants; 0.3 mum; Ga0.5In0.5P; Ga0.5In0.5P windows; Ge; Ge substrate; InP; cell performance; n/p InP thick emitter; p/n InP thick emitter; polarity cells; radiation hardness; space solar cells; thick emitter InP solar cells; Degradation; Indium phosphide; Passivation; Photonic band gap; Photovoltaic cells; Photovoltaic systems; Radiative recombination; Solar power generation; Substrates; Wideband;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE
  • Conference_Location
    Washington, DC
  • ISSN
    0160-8371
  • Print_ISBN
    0-7803-3166-4
  • Type

    conf

  • DOI
    10.1109/PVSC.1996.563975
  • Filename
    563975
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3146716