A 34 dBm IP0.1dB SOI SP3T switch with an integrated negative-bias switch controller at 2.4 GHz

Author

Yoon, Sunwoo ; Jung, JuYoung ; Baek, Dong-hyun

Author_Institution

Chung-Ang Univ., Seoul, South Korea

fYear

2011

fDate

17-18 Nov. 2011

Firstpage

235

Lastpage

237

Abstract

In this paper, a single pole triple through (SP3T) T/R switch with high input P_0.1dB performance and low insertion loss is reported. The switch is designed using a 0.32 μm SOI process for 2.4 GHz operating frequencies. To increase the power capability, 10-stacked MOSFETs are used for the switching device. And the body floating techniques are also employed. The negative biasing controller for enhancing P_1dB is proposed to control the switching power cell on a single die with the switch power cell. The implemented T/R switch exhibits P_0.1dB of 34 dBm at 2.4 GHz from 3 V supply voltage. The insertion losses of the switch are 0.5 dB at 2.4 GHz. The isolations are more than 25 dB at 2.4 GHz.

Keywords

UHF field effect transistors; field effect transistor switches; silicon-on-insulator; MOSFET; SOI SP3T switch design; body floating techniques; frequency 2.4 GHz; insertion loss; integrated negative-bias switch controller; single pole triple through T/R switch; size 0.32 mum; switching power cell control; voltage 3 V; SP3T; Switchs controller; T/R Switch;

fLanguage

English

Publisher

ieee

Conference_Titel

SoC Design Conference (ISOCC), 2011 International

Conference_Location

Jeju

Print_ISBN

978-1-4577-0709-4

Electronic_ISBN

978-1-4577-0710-0

Type

conf

DOI

10.1109/ISOCC.2011.6138753

Filename

6138753