• DocumentCode
    3146942
  • Title

    Influence of RF measurement uncertainties on model uncertainties: practical case of a SiGe HBT

  • Author

    Schreurs, D. ; Hussain, H. ; Taher, H. ; Nauwelaers, B.

  • Author_Institution
    Div. ESAT-TELEMIC, Katholieke Univ., Leuven, Belgium
  • fYear
    2004
  • fDate
    2-3 Dec. 2004
  • Firstpage
    33
  • Lastpage
    39
  • Abstract
    Measurement based models, like small-signal equivalent circuit models of microwave transistors, are often extracted under the assumption of having perfect measurements. In this work we study how the uncertainties of S-parameter measurements affect the uncertainties of model element values in the practical case of a SiGe HBT.
  • Keywords
    Ge-Si alloys; S-parameters; equivalent circuits; heterojunction bipolar transistors; measurement uncertainty; microwave bipolar transistors; microwave measurement; Ge-Si; RF measurement uncertainties; S-parameter measurements; SiGe HBT; measurement based models; microwave transistors; model element values; model uncertainties; small-signal equivalent circuit models; Computer aided software engineering; Covariance matrix; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Jacobian matrices; Measurement uncertainty; Microwave measurements; Scattering parameters; Silicon germanium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Measurements Conference, Fall 2004. 64th ARFTG
  • Print_ISBN
    0-7803-8952-2
  • Type

    conf

  • DOI
    10.1109/ARFTGF.2004.1427568
  • Filename
    1427568
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3146942