Title :
Gate-oxide degradation from source/drain (S/D) boron diffusion
Author :
Cheung, K.P. ; Chang, C.-P. ; Colonell, J.I. ; Lai, W.-Y.-C. ; Liu, C.-T. ; Liu, R. ; Pai, C.-S. ; Rafferty, C.S. ; Vaidya, H. ; Clemens, J.T.
Author_Institution :
Lucent Technol., Murray Hill, NJ, USA
Abstract :
Boron diffusion from p/sup +/-poly gate through thin gate oxide not only causes a transistor to degrade, but also reduces the reliability of the thin gate-oxide. This problem has been studied extensively. Since high concentration of boron is used in the S/D of p-MOSFET, it has long been speculated that boron diffusion from S/D can also cause gate-oxide reliability problem. However, such a degradation mode has never been reported. In this paper, we report clear evidence of such degradation and show that boron diffusion from S/D sets a limit to spacer thickness scaling.
Keywords :
MOSFET; diffusion; semiconductor device measurement; semiconductor device reliability; degradation mode; gate-oxide degradation; p-MOSFET; p/sup +/-poly gate; reliability; source/drain diffusion; spacer thickness scaling; Annealing; Boron; CMOS technology; Capacitors; Degradation; Design for quality; Electric breakdown; Implants; MOSFET circuits; Stress;
Conference_Titel :
VLSI Technology, 1998. Digest of Technical Papers. 1998 Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-4770-6
DOI :
10.1109/VLSIT.1998.689255
