DocumentCode :
3146970
Title :
Organic ferroelectric multilayer for programmable logic gate
Author :
Ishida, Kenji ; Horie, Satoshi ; Matsushige, Kazumi ; Ueda, Yasukiyo
Author_Institution :
Kobe Univ., Kobe
fYear :
2008
fDate :
15-17 Sept. 2008
Abstract :
We demonstrate the operation of programmable logic gates using organic ferroelectrics. The vinylidene fluoride(VDF) oligomer, which is an organic ferroelectric with low molecular weight, was used as organic ferroelectric. Multilayer structure, Al/VDF/Al/VDF/Al, was fabricated on flexible substrate by vacuum deposition. A rectangular polarization hysteresis loop was observed in VDF oligomer thin film of each stacked ferroelectric layer and the switching characteristic evaluated as AND and OR gate by the polarization reversal of the fabricated stacked structure. Therefore, the organic ferroelectric multilayer could treat as programable logic gate by controlling direction of polarization.
Keywords :
aluminium; dielectric hysteresis; dielectric polarisation; ferroelectric materials; ferroelectric switching; ferroelectric thin films; logic gates; multilayers; organic compounds; programmable logic devices; vacuum deposition; AND gate; Al; OR gate; fabricated stacked structure; flexible substrate; molecular weight; organic ferroelectric multilayer structure; polarization reversal; programmable logic gate; rectangular polarization hysteresis loop; stacked ferroelectric layer; switching characteristic; vacuum deposition; vinylidene fluoride oligomer thin film; Artificial intelligence; Ferroelectric materials; Hysteresis; Logic gates; Nonhomogeneous media; Polarization; Programmable logic arrays; Programmable logic devices; Substrates; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrets, 2008. ISE-13. 13th International Symposium on
Conference_Location :
Tokyo
Print_ISBN :
978-1-4244-1850-3
Electronic_ISBN :
978-1-4244-1851-0
Type :
conf
DOI :
10.1109/ISE.2008.4814031
Filename :
4814031
Link To Document :
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