• DocumentCode
    3147214
  • Title

    The resonant method: an approximate method for extracting the effective parasitic capacitance of a large signal transistor

  • Author

    Noori, Bash ; Giffin, Lyle

  • fYear
    2004
  • fDate
    2-3 Dec. 2004
  • Firstpage
    101
  • Lastpage
    111
  • Abstract
    The paper describes a simplified method for extracting the effective parasitic capacitances of a packaged LDMOS power transistor using simple de-embedded 2-port S-parameter extraction method. A study case is also discussed with the results verified empirically. This method uses three simultaneous equations to solve for the three capacitances most important to the PA designer, namely, the effective output capacitance, Coss, the effective input capacitance, Ciss, and the effective feedback capacitance, Crss.
  • Keywords
    S-parameters; capacitance; capacitance measurement; equations; equivalent circuits; power MOSFET; LDMOS power transistor; PA designer; S-parameter extraction method; effective feedback capacitance; effective input capacitance; effective output capacitance; effective parasitic capacitance; equivalent circuit model; large signal transistor; parasitic capacitance measurement; resonant method; simultaneous equations; Bandwidth; Circuits; High power amplifiers; Impedance matching; Packaging; Parasitic capacitance; Power transistors; Radio frequency; Resonance; Scattering parameters;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Measurements Conference, Fall 2004. 64th ARFTG
  • Print_ISBN
    0-7803-8952-2
  • Type

    conf

  • DOI
    10.1109/ARFTGF.2004.1427578
  • Filename
    1427578