• DocumentCode
    3147386
  • Title

    Impact on soft error rate of using platinum electrodes in 1 Gb DRAMs

  • Author

    Shyh-Horng Yang ; Seitchik, J. ; Aton, T. ; Shichijo, H.

  • Author_Institution
    Silicon Technol. Dev., Texas Instrum. Inc., Dallas, TX, USA
  • fYear
    1998
  • fDate
    9-11 June 1998
  • Firstpage
    202
  • Lastpage
    203
  • Abstract
    We have investigated the impact on soft error rate (SER) of introducing platinum (Pt) as the capacitor electrodes in 1 Gb DRAM technology. For 0.16 /spl mu/m feature size, we find that direct a particle strikes only cause errors for a critical charge below 6 fC. However, silicon nuclei recoils via Rutherford scattering from these /spl alpha/ particles have sufficient energy to cause soft errors up to about 60 fC of critical charge. The number of such recoils with sufficient energy to cause soft errors is found to be at least 20/spl times/-100/spl times/ smaller than that of the nuclei recoils generated by cosmic-ray neutrons. This indicates that introducing Pt electrodes in a 1 Gb DRAM will not degrade its SER performance as long as the critical charge is kept above 6 fC.
  • Keywords
    DRAM chips; Rutherford backscattering; alpha-particle effects; capacitors; electrodes; errors; platinum; /spl alpha/ particle irradiation; 0.16 micron; 1 Gbit; DRAM; Pt; Rutherford scattering; capacitor; critical charge; particle strike; platinum electrode; silicon nuclear recoil; soft error rate; Atomic layer deposition; Degradation; Dielectric substrates; Electrodes; Error analysis; Neutrons; Particle tracking; Platinum; Random access memory; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, 1998. Digest of Technical Papers. 1998 Symposium on
  • Conference_Location
    Honolulu, HI, USA
  • Print_ISBN
    0-7803-4770-6
  • Type

    conf

  • DOI
    10.1109/VLSIT.1998.689257
  • Filename
    689257