DocumentCode
3147386
Title
Impact on soft error rate of using platinum electrodes in 1 Gb DRAMs
Author
Shyh-Horng Yang ; Seitchik, J. ; Aton, T. ; Shichijo, H.
Author_Institution
Silicon Technol. Dev., Texas Instrum. Inc., Dallas, TX, USA
fYear
1998
fDate
9-11 June 1998
Firstpage
202
Lastpage
203
Abstract
We have investigated the impact on soft error rate (SER) of introducing platinum (Pt) as the capacitor electrodes in 1 Gb DRAM technology. For 0.16 /spl mu/m feature size, we find that direct a particle strikes only cause errors for a critical charge below 6 fC. However, silicon nuclei recoils via Rutherford scattering from these /spl alpha/ particles have sufficient energy to cause soft errors up to about 60 fC of critical charge. The number of such recoils with sufficient energy to cause soft errors is found to be at least 20/spl times/-100/spl times/ smaller than that of the nuclei recoils generated by cosmic-ray neutrons. This indicates that introducing Pt electrodes in a 1 Gb DRAM will not degrade its SER performance as long as the critical charge is kept above 6 fC.
Keywords
DRAM chips; Rutherford backscattering; alpha-particle effects; capacitors; electrodes; errors; platinum; /spl alpha/ particle irradiation; 0.16 micron; 1 Gbit; DRAM; Pt; Rutherford scattering; capacitor; critical charge; particle strike; platinum electrode; silicon nuclear recoil; soft error rate; Atomic layer deposition; Degradation; Dielectric substrates; Electrodes; Error analysis; Neutrons; Particle tracking; Platinum; Random access memory; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 1998. Digest of Technical Papers. 1998 Symposium on
Conference_Location
Honolulu, HI, USA
Print_ISBN
0-7803-4770-6
Type
conf
DOI
10.1109/VLSIT.1998.689257
Filename
689257
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