DocumentCode
3147632
Title
Trench transformation technology using hydrogen annealing for realizing highly reliable device structure with thin dielectric films
Author
Sato, T. ; Mizushima, I. ; Iba, J. ; Kito, M. ; Takegawa, Y. ; Sudo, A. ; Tsunashima, Y.
Author_Institution
Microelectron. Eng. Lab., Toshiba Corp., Yokohama, Japan
fYear
1998
fDate
9-11 June 1998
Firstpage
206
Lastpage
207
Abstract
The shape and the surface morphology of the trench structure was successfully transformed by the annealing in hydrogen ambient. The corner was rounded and the surface morphology was smoothened on the inside of the trench. Electrical characteristics of the thin oxide grown in the deep trench capacitor were drastically improved. The hydrogen annealing condition was optimized based on the transformation mechanism.
Keywords
annealing; capacitors; dielectric thin films; isolation technology; reliability; deep trench capacitor; device reliability; dielectric thin film; electrical characteristics; hydrogen annealing; oxide growth; surface morphology; trench transformation technology; Annealing; Capacitors; Electrodes; Error analysis; Etching; Hydrogen; Platinum; Random access memory; Shape; Surface morphology;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 1998. Digest of Technical Papers. 1998 Symposium on
Conference_Location
Honolulu, HI, USA
Print_ISBN
0-7803-4770-6
Type
conf
DOI
10.1109/VLSIT.1998.689258
Filename
689258
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