DocumentCode
3147642
Title
New Injection-Voltaic Effect Elementary Basis
Author
Aripov, Kh.K. ; Bustanov, Kh.Kh. ; Nasirkhodjaev, F.R. ; Ob´edkov, E.V.
Author_Institution
Tashkent Univ. of Inf. Technol., Tashkent
fYear
2006
fDate
19-21 Sept. 2006
Firstpage
1
Lastpage
4
Abstract
A circuit of an ideal stable current generator (SCG) was offered. It was shown that at a fixed value of the SCG current and chosen technology of integrated circuits production, it is possible to design such technology of structural elements of SCG as to value of internal resistance of the circuit tending to infinity. A complimentary bipolar transistors inverter (CBTI) was offered which can work at low supply voltages (near to contact potential difference on p-n junction of bipolar transistors (BT) and has low consumption current.
Keywords
bipolar transistor circuits; invertors; complimentary bipolar transistors inverter; current generator; injection-voltaic effect elementary basis; p-n junction of bipolar transistors; photovoltaic effect; Bipolar transistors; Contacts; H infinity control; Information technology; Integrated circuit technology; Inverters; Low voltage; P-n junctions; Production; Thyristors; CBTI; IVT; Injection-Voltaic Effect;
fLanguage
English
Publisher
ieee
Conference_Titel
Internet, 2006 2nd IEEE/IFIP International Conference in Central Asia on
Conference_Location
Tashkent
Print_ISBN
1-4244-0543-2
Electronic_ISBN
1-4244-0543-2
Type
conf
DOI
10.1109/CANET.2006.279269
Filename
4055201
Link To Document