DocumentCode :
3147642
Title :
New Injection-Voltaic Effect Elementary Basis
Author :
Aripov, Kh.K. ; Bustanov, Kh.Kh. ; Nasirkhodjaev, F.R. ; Ob´edkov, E.V.
Author_Institution :
Tashkent Univ. of Inf. Technol., Tashkent
fYear :
2006
fDate :
19-21 Sept. 2006
Firstpage :
1
Lastpage :
4
Abstract :
A circuit of an ideal stable current generator (SCG) was offered. It was shown that at a fixed value of the SCG current and chosen technology of integrated circuits production, it is possible to design such technology of structural elements of SCG as to value of internal resistance of the circuit tending to infinity. A complimentary bipolar transistors inverter (CBTI) was offered which can work at low supply voltages (near to contact potential difference on p-n junction of bipolar transistors (BT) and has low consumption current.
Keywords :
bipolar transistor circuits; invertors; complimentary bipolar transistors inverter; current generator; injection-voltaic effect elementary basis; p-n junction of bipolar transistors; photovoltaic effect; Bipolar transistors; Contacts; H infinity control; Information technology; Integrated circuit technology; Inverters; Low voltage; P-n junctions; Production; Thyristors; CBTI; IVT; Injection-Voltaic Effect;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Internet, 2006 2nd IEEE/IFIP International Conference in Central Asia on
Conference_Location :
Tashkent
Print_ISBN :
1-4244-0543-2
Electronic_ISBN :
1-4244-0543-2
Type :
conf
DOI :
10.1109/CANET.2006.279269
Filename :
4055201
Link To Document :
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