• DocumentCode
    3147642
  • Title

    New Injection-Voltaic Effect Elementary Basis

  • Author

    Aripov, Kh.K. ; Bustanov, Kh.Kh. ; Nasirkhodjaev, F.R. ; Ob´edkov, E.V.

  • Author_Institution
    Tashkent Univ. of Inf. Technol., Tashkent
  • fYear
    2006
  • fDate
    19-21 Sept. 2006
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    A circuit of an ideal stable current generator (SCG) was offered. It was shown that at a fixed value of the SCG current and chosen technology of integrated circuits production, it is possible to design such technology of structural elements of SCG as to value of internal resistance of the circuit tending to infinity. A complimentary bipolar transistors inverter (CBTI) was offered which can work at low supply voltages (near to contact potential difference on p-n junction of bipolar transistors (BT) and has low consumption current.
  • Keywords
    bipolar transistor circuits; invertors; complimentary bipolar transistors inverter; current generator; injection-voltaic effect elementary basis; p-n junction of bipolar transistors; photovoltaic effect; Bipolar transistors; Contacts; H infinity control; Information technology; Integrated circuit technology; Inverters; Low voltage; P-n junctions; Production; Thyristors; CBTI; IVT; Injection-Voltaic Effect;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Internet, 2006 2nd IEEE/IFIP International Conference in Central Asia on
  • Conference_Location
    Tashkent
  • Print_ISBN
    1-4244-0543-2
  • Electronic_ISBN
    1-4244-0543-2
  • Type

    conf

  • DOI
    10.1109/CANET.2006.279269
  • Filename
    4055201