• DocumentCode
    3147733
  • Title

    Piezoelectret-microphones with coiled film stacks

  • Author

    Hillenbrand, J. ; Sessler, G.M.

  • Author_Institution
    Inst. of Commun. Technol., Darmstadt Univ. of Technol., Darmstadt
  • fYear
    2008
  • fDate
    15-17 Sept. 2008
  • Abstract
    Piezoelectret-microphones are characterized by low harmonic distortion, high cut-off frequencies and high sensitivities [1,2]. The high sensitivities are obtained by using film stacks, in which an electrical series connection of the individual films is realized and therefore a linear increase of the open-circuit sensitivity with the number of films is expected. Since the capacitance of the film stack decreases inversely proportional to the number of films and since a capacitive voltage division at the FET input stage is unavoidable, highest microphone output signals are achieved when each ferroelectret film has both high sensitivity and high capacitance. Naturally, small microphones are desirable and therefore various microphone designs with coiled film stacks and integrated FET were constructed and characterized by free-field measurements.
  • Keywords
    capacitive sensors; ferroelectric capacitors; ferroelectric materials; ferroelectric thin films; field effect transistors; microphones; piezoelectric materials; piezoelectric thin films; piezoelectric transducers; FET input stage; capacitive voltage division; coiled film stacks; electrical film series connection; ferroelectret film capacitance; ferroelectret film sensitivity; film stack capacitance; free field measurements; high cut off frequency; high frequency sensitivity; integrated FET; low harmonic distortion; open circuit sensitivity; piezoelectret microphones; small microphones; Capacitance; Distortion measurement; FETs; Frequency measurement; Microphones; Noise level; Noise measurement; Piezoelectric films; Total harmonic distortion; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrets, 2008. ISE-13. 13th International Symposium on
  • Conference_Location
    Tokyo
  • Print_ISBN
    978-1-4244-1850-3
  • Electronic_ISBN
    978-1-4244-1851-0
  • Type

    conf

  • DOI
    10.1109/ISE.2008.4814066
  • Filename
    4814066