DocumentCode
3147810
Title
The electrical resistance ratio (RR) as a thin film metal monitor
Author
Baerg, William ; Wu, Ken ; Davies, Paul ; Dao, Giang ; Fraser, Dave
Author_Institution
Intel Corp., Santa Clara, CA, USA
fYear
1990
fDate
27-29 March 1990
Firstpage
119
Lastpage
123
Abstract
Data that demonstrate the usefulness of RR, the electrical resistance ratio between 298 K and 77 K, for monitoring the equality of Al-Si metal films are presented. A correlation between RR, electromigration median-time-to-fail (MTTF), and median-grain-radius (MGR) of the metal is shown, using examples of N/sub 2/ and H/sub 2/O contaminated films.<>
Keywords
VLSI; aluminium alloys; electromigration; electronic conduction in metallic thin films; failure analysis; metallisation; monitoring; silicon alloys; 77 to 298 K; AlSi films; AlSi:H/sub 2/O; AlSi:N; VLSI interconnects; electrical resistance ratio; electromigration median-time-to-fail; median-grain-radius; thin film metal monitor; Electric resistance; Electrical resistance measurement; Electromigration; Monitoring; Phonons; Pollution measurement; Scattering; Semiconductor films; Sputtering; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1990. 28th Annual Proceedings., International
Conference_Location
New Orleans, LA, USA
Type
conf
DOI
10.1109/RELPHY.1990.66073
Filename
66073
Link To Document