Title :
Simulation of the energy deposited in a component by an electron beam of energy between 20 keV and 3 MeV
Author :
Ouabbou, A. ; Gérard, P. ; Martinez, J.P. ; Balladore, J.L.
Author_Institution :
CEMES-LOE, Toulouse, France
Abstract :
Irradiation of a transistor by an electron beam which energy ranges from 20 keV to 3 MeV has been studied. Using experimental results obtained previously, the authors simulate, with the aid of a Monte-Carlo method, electron trajectories through different layers of an electronic circuit. Taking into account the different interactions between the incident electron and the target atoms, leading especially to X-ray emission and secondary electrons, they determine the energy deposited by the beam at different depths in the target
Keywords :
Monte Carlo methods; electron beam effects; insulated gate field effect transistors; radiation hardening (electronics); semiconductor device models; 20 keV to 3 MeV; MOS transistor; Monte-Carlo method; X-ray emission; electron beam; electron irradiated transistor; electron trajectories; energy deposited; secondary electrons; Content addressable storage; Electron beams;
Conference_Titel :
Radiation and its Effects on Devices and Systems, 1991. RADECS 91., First European Conference on
Conference_Location :
La Grande-Motte
Print_ISBN :
0-7803-0208-7
DOI :
10.1109/RADECS.1991.213543
