Title :
Results of three recent GaAs flight experiments: Ascot, PASP-Plus, and STRV-1b
Author :
Marvin, D.C. ; Gates, M.
Author_Institution :
Aerosp. Corp., Albuquerque, NM, USA
Abstract :
Gallium arsenide on germanium (GaAs/Ge) solar cells are being used on an increasing fraction of space missions because of their increased efficiency over silicon solar cells. Three recent flight experiments in orbits that rapidly accumulate radiation exposure have included GaAs-containing cells of various designs. The data from these experiments presented in this paper verify the radiation degradation models for these solar cells and give confidence in their projected performance in proton-dominated orbits
Keywords :
III-V semiconductors; aerospace testing; elemental semiconductors; gallium arsenide; germanium; photovoltaic power systems; semiconductor device testing; solar cells; space vehicle power plants; Ascot; GaAs-Ge; GaAs-Ge solar cells; PASP-Plus; STRV-1b; flight experiments; performance projection; proton-dominated orbits; radiation degradation tests; radiation exposure accumulation; space power; Aerospace electronics; Circuit testing; Degradation; Electrons; Gallium arsenide; Orbits; Photovoltaic cells; Silicon; Space technology; Space vehicles;
Conference_Titel :
Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-3166-4
DOI :
10.1109/PVSC.1996.563981
