Investigation of single event effects of high energetic heavy ions

Author

Dreute, J. ; Heinrich, W. ; Röcher, H. ; Sorensen, R. Harboe ; Adams, L. ; Schardt, D. ; Vetter, J.

Author_Institution

Dept. of Phys., Siegen Univ., Germany

fYear

1991

fDate

9-12 Sep 1991

Firstpage

505

Lastpage

508

Abstract

The authors started a research program using heavy ion beams to investigate radiation effects on microelectronic devices. In order to expose static random access memory (SRAM) devices to heavy ions a test system was installed. This setup was first operated using different ions at the GSI UNILAC with energies below 20 MeV/nucleon. After these first tests further measurements were performed with ions of different charge and energy up to 1 GeV/nucleon at the GSI-SIS. As ions with energies of some hundred MeV/nucleon are a good representation of space conditions such beams are interesting for reliability tests of microelectronic space equipment. The experimental setup and the exposure conditions at GSI are described and first results are presented

Keywords

SRAM chips; aerospace instrumentation; integrated circuit testing; ion beam effects; radiation hardening (electronics); high energetic heavy ions; microelectronic devices; radiation effects; reliability tests; single event effects; space conditions; static random access memory; test system; Charge measurement; Current measurement; Energy measurement; Ion beams; Microelectronics; Nuclear measurements; Radiation effects; Random access memory; SRAM chips; System testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation and its Effects on Devices and Systems, 1991. RADECS 91., First European Conference on

Conference_Location

La Grande-Motte

Print_ISBN

0-7803-0208-7

Type

conf

DOI

10.1109/RADECS.1991.213548

Filename

213548