DocumentCode
3148250
Title
Heavy ions induced electrical and structural defects in thermal SiO 2 films
Author
Busch, M.C. ; Dooryhee, E. ; Slaoui, A. ; Toulemonde, M. ; Mesli, A. ; Siffert, P.
Author_Institution
Centre de Recherches Nucl., Strasbourg, France
fYear
1991
fDate
9-12 Sep 1991
Firstpage
484
Lastpage
488
Abstract
The behaviour of SiO2/Si structures irradiated by high energy (> 0.5 GeV) Xe and Ni ions has been investigated. Structural analysis of the as-irradiated SiO2 films, performed with infrared spectroscopy, indicates atomic displacements, broken and strained Si-O bonds induced by irradiation. Electrical measurements of irradiated SiO2/Si structures show an increase of the interface state density Dit and of the oxide trapped charge density. Not with the fluence. Electrically active defects were detected in Si substrate and are associated with vacancy complexes
Keywords
defect electron energy states; energy loss of particles; interface electron states; ion beam effects; semiconductor-insulator boundaries; silicon; silicon compounds; vacancies (crystal); 551 MeV; 762 MeV; Ni ion irradiation; Si substrate; SiO2-Si structures; Xe ion irradiation; atomic displacements; broken bonds; electrical defects; heavy ion induced defects; interface state density; oxide trapped charge density; radiation damage; stopping regime; strained bonds; structural defects; thermal SiO2 films; vacancy complexes; Atomic layer deposition; Atomic measurements; Current measurement; Density measurement; Electric variables measurement; Electrons; Infrared spectra; Oxidation; Performance analysis; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and its Effects on Devices and Systems, 1991. RADECS 91., First European Conference on
Conference_Location
La Grande-Motte
Print_ISBN
0-7803-0208-7
Type
conf
DOI
10.1109/RADECS.1991.213550
Filename
213550
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