Title :
Transient radiation response of VLSI circuits: shadowing effects and pulse widths dependence in laser measurements
Author :
Jönsson, M. ; Mattsson, S.
Author_Institution :
SAAB SPACE AB, Goteborg, Sweden
Abstract :
Transient radiation response on VLSI-circuits (SRAM, EPROM, EEPROM) of various complexities were studied for different pulse widths using both laser and accelerator sources. The shadowing effects of the incident laser light due to the metallization were also investigated
Keywords :
EPROM; SRAM chips; VLSI; integrated circuit testing; measurement by laser beam; metallisation; radiation effects; transient response; 3 MeV; EEPROM; EPROM; SRAM; VLSI-circuits; laser measurements; latchup threshold values; metallization; pulse widths dependence; shadowing effects; transient radiation response; Circuit simulation; Circuit testing; Laboratories; Metallization; Optical pulses; Pulse circuits; Pulse measurements; Shadow mapping; Space vector pulse width modulation; Very large scale integration;
Conference_Titel :
Radiation and its Effects on Devices and Systems, 1991. RADECS 91., First European Conference on
Conference_Location :
La Grande-Motte
Print_ISBN :
0-7803-0208-7
DOI :
10.1109/RADECS.1991.213556
