Influence of low energy electronic radiation on the latchup triggering level in CMOS integrated circuits

Author

Roche, F.M. ; Bocus, S.D. ; Pistoulet, B.

Author_Institution

Lab. d´´Inf., de Robotique et de Microelectron. de Montpellier, Univ. de Montpellier Sci. et Tech. du Languedoc, France

fYear

1991

fDate

9-12 Sep 1991

Firstpage

440

Lastpage

444

Abstract

The authors present experimental results showing the latchup sensitization of CMOS integrated circuits when subject to low energy electronic radiation. They emphasize the major role played by the incident electron dose and explain the mechanism through which irradiation can decrease the latchup immunity of the device. The results have been obtained on a test vehicle achieved in a 2 μm industrial technology. The observations are discussed with the help of an electrical model

Keywords

CMOS integrated circuits; electron beam effects; electron beam testing; integrated circuit testing; 2 micron; CMOS integrated circuits; electrical model; incident electron dose; latchup immunity; latchup sensitization; latchup triggering level; low energy electronic radiation; CMOS integrated circuits; Circuit testing; Electron beams; MOSFETs; Polarization; Robots; Scanning electron microscopy; Substrates; Surface charging; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation and its Effects on Devices and Systems, 1991. RADECS 91., First European Conference on

Conference_Location

La Grande-Motte

Print_ISBN

0-7803-0208-7

Type

conf

DOI

10.1109/RADECS.1991.213558

Filename

213558