DocumentCode :
3148453
Title :
Modeling and metrology of metallic nanowires with application to microwave interconnects
Author :
Kim, Kunsu ; Wallis, M. ; Rise, P. ; Chiang, Charles ; Imtiaz, Al ; Kabos, P. ; Filipovic, Dejan S.
Author_Institution :
University of Colorado, Boulder, United States
fYear :
2010
fDate :
23-28 May 2010
Firstpage :
1
Lastpage :
1
Abstract :
Broadband characterization of individual metallic nanowires for microwave interconnect applications is discussed. Circuit and method of moments (MoM) modeling are benchmarked using a set of coplanar waveguide (CPW) test devices with Au microwire (MW) interconnect and air gaps in the middle of the CPW. Comparison with measurements reveals significantly larger errors from circuit models though all dimensions are much smaller than wavelength. Similar CPW devices hosting 100 nm and 250 nm diameter Pt nanowires (NWs) are then investigated to determine the ranges of conductivity and contact resistance for each Pt NW. An algorithm that utilizes the transmission line theory and different nanowire lengths to determine the actual conductivity and contact resistance is proposed and validated.
Keywords :
Benchmark testing; Circuit testing; Conductivity; Contact resistance; Coplanar waveguides; Integrated circuit interconnections; Metrology; Microwave devices; Moment methods; Nanowires;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International
Conference_Location :
Anaheim, CA
ISSN :
0149-645X
Print_ISBN :
978-1-4244-6056-4
Electronic_ISBN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.2010.5517856
Filename :
5517856
Link To Document :
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