• DocumentCode
    3148453
  • Title

    Modeling and metrology of metallic nanowires with application to microwave interconnects

  • Author

    Kim, Kunsu ; Wallis, M. ; Rise, P. ; Chiang, Charles ; Imtiaz, Al ; Kabos, P. ; Filipovic, Dejan S.

  • Author_Institution
    University of Colorado, Boulder, United States
  • fYear
    2010
  • fDate
    23-28 May 2010
  • Firstpage
    1
  • Lastpage
    1
  • Abstract
    Broadband characterization of individual metallic nanowires for microwave interconnect applications is discussed. Circuit and method of moments (MoM) modeling are benchmarked using a set of coplanar waveguide (CPW) test devices with Au microwire (MW) interconnect and air gaps in the middle of the CPW. Comparison with measurements reveals significantly larger errors from circuit models though all dimensions are much smaller than wavelength. Similar CPW devices hosting 100 nm and 250 nm diameter Pt nanowires (NWs) are then investigated to determine the ranges of conductivity and contact resistance for each Pt NW. An algorithm that utilizes the transmission line theory and different nanowire lengths to determine the actual conductivity and contact resistance is proposed and validated.
  • Keywords
    Benchmark testing; Circuit testing; Conductivity; Contact resistance; Coplanar waveguides; Integrated circuit interconnections; Metrology; Microwave devices; Moment methods; Nanowires;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International
  • Conference_Location
    Anaheim, CA
  • ISSN
    0149-645X
  • Print_ISBN
    978-1-4244-6056-4
  • Electronic_ISBN
    0149-645X
  • Type

    conf

  • DOI
    10.1109/MWSYM.2010.5517856
  • Filename
    5517856