DocumentCode
3148453
Title
Modeling and metrology of metallic nanowires with application to microwave interconnects
Author
Kim, Kunsu ; Wallis, M. ; Rise, P. ; Chiang, Charles ; Imtiaz, Al ; Kabos, P. ; Filipovic, Dejan S.
Author_Institution
University of Colorado, Boulder, United States
fYear
2010
fDate
23-28 May 2010
Firstpage
1
Lastpage
1
Abstract
Broadband characterization of individual metallic nanowires for microwave interconnect applications is discussed. Circuit and method of moments (MoM) modeling are benchmarked using a set of coplanar waveguide (CPW) test devices with Au microwire (MW) interconnect and air gaps in the middle of the CPW. Comparison with measurements reveals significantly larger errors from circuit models though all dimensions are much smaller than wavelength. Similar CPW devices hosting 100 nm and 250 nm diameter Pt nanowires (NWs) are then investigated to determine the ranges of conductivity and contact resistance for each Pt NW. An algorithm that utilizes the transmission line theory and different nanowire lengths to determine the actual conductivity and contact resistance is proposed and validated.
Keywords
Benchmark testing; Circuit testing; Conductivity; Contact resistance; Coplanar waveguides; Integrated circuit interconnections; Metrology; Microwave devices; Moment methods; Nanowires;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International
Conference_Location
Anaheim, CA
ISSN
0149-645X
Print_ISBN
978-1-4244-6056-4
Electronic_ISBN
0149-645X
Type
conf
DOI
10.1109/MWSYM.2010.5517856
Filename
5517856
Link To Document