Title :
Microbeam analysis of MOS circuits
Author :
NcNulty, P.J. ; Beauvais, W.J. ; Roth, D.R. ; Lynch, J.E. ; Knudson, A.R. ; Stapor, W.J.
Author_Institution :
Dept. of Phys. & Astron., Clemson Univ., SC, USA
Abstract :
Irradiation of MOS SRAMs by energetic heavy ions results in pulses on the power lines of the device. Pulse-height analysis shows a series of peaks when the irradiation consists of identical particles incident in the same direction. Analysis through a microbeam shows that the pulses are generated by traversals of the p-n junctions making up the transistors of the device. Junctions in the memory array were found to dominate the spectrum from a CMOS device while those of the support circuitry dominate the spectrum from a DRAM
Keywords :
CMOS integrated circuits; SRAM chips; alpha-particle effects; integrated circuit testing; ion beam effects; ion microprobe analysis; 4.8 MeV; CMOS SRAM; MOS circuits; alpha particle effects; heavy ion irradiation; memory array; microbeam analysis; pulse-height analysis; Astronomy; CMOS memory circuits; CMOS technology; Circuit analysis; Laboratories; Physics; Pulse amplifiers; Pulse generation; Random access memory; Variable structure systems;
Conference_Titel :
Radiation and its Effects on Devices and Systems, 1991. RADECS 91., First European Conference on
Conference_Location :
La Grande-Motte
Print_ISBN :
0-7803-0208-7
DOI :
10.1109/RADECS.1991.213559
