Title :
Semi-empirical modelization of charge funneling in a np diode
Author_Institution :
CEA, Centre d´´Etudes de Bruyeres le Chatel, France
Abstract :
A semi-empirical model of charge funneling in a n+p diode hit by a heavy ion is proposed. An electric field is induced in the plasma column by the equilibrium depleted region, taken as a plate capacitor. It separates carriers and drives a current in the substrate. Based on simplifying assumptions, transient current, funneling length and collection efficiency are determined. Calculated values are found in good agreement with available experimental data. The purpose of this model is to provide a physical interpretation of charge collection mechanism, and to be extrapolated to more complex structures
Keywords :
ion beam effects; semiconductor device models; semiconductor diodes; space charge; transients; charge collection mechanism; charge funneling; collection efficiency; equilibrium depleted region; funneling length; heavy ion effects; n+p diode; plasma column; plate capacitor; radiation effects; semi-empirical model; transient current; Capacitors; Differential equations; Kinetic energy; Physics computing; Plasmas; Resumes; Semiconductivity; Semiconductor diodes; Space charge; Substrates;
Conference_Titel :
Radiation and its Effects on Devices and Systems, 1991. RADECS 91., First European Conference on
Conference_Location :
La Grande-Motte
Print_ISBN :
0-7803-0208-7
DOI :
10.1109/RADECS.1991.213560
