Title :
4He, 12C and 63Cu ions effect simulation on silicon diode
Author :
Michez, A. ; Bordure, G. ; Patin, Y. ; Gosselin, G.
Author_Institution :
Univ. des Sci. et Tech. du Languedoc, Montpellier, France
Abstract :
The effect of 5 MeV α particles, 30 MeV 12C ions and 70 MeV 63Cu ions on a large area silicon P+N diode is simulated. Computer simulation is performed in 3D axisymmetric geometry with the device simulator ACCES. The effect of high LET particles with short track is compared to the effect of low LET particles with long track. The diffusion component of the collected charge is shown to be important for the three particles in this large area 10 V reverse-biased diode
Keywords :
alpha-particle effects; electronic engineering computing; ion beam effects; semiconductor device models; semiconductor diodes; space charge; 10 V; 30 MeV; 3D axisymmetric geometry; 5 MeV; 70 MeV; C ions; Cu ions; He ions; P+N diode; Si diode; alpha-particle effect; computer simulation; device simulator ACCES; elemental semiconductors; funnel effect; ion effects; reverse-biased diode; Charge carrier processes; Computational geometry; Computational modeling; Computer simulation; Doping; Helium; Poisson equations; Semiconductor diodes; Semiconductor process modeling; Silicon;
Conference_Titel :
Radiation and its Effects on Devices and Systems, 1991. RADECS 91., First European Conference on
Conference_Location :
La Grande-Motte
Print_ISBN :
0-7803-0208-7
DOI :
10.1109/RADECS.1991.213562
