Radiation sensitivity of light emitting diodes (LED), laser diodes (LD) and photodiodes (PD)

Author

Lischka, H. ; Henschel, H. ; Lennartz, W. ; Schmidt, H.U.

Author_Institution

Fraunhofer-INT, Euskirchen, Germany

fYear

1991

fDate

9-12 Sep 1991

Firstpage

404

Lastpage

408

Abstract

Commercially available diodes were irradiated at a flash X-ray source, a ⁶⁰Co gamma ray source, and a 14 MeV neutron generator. During irradiation at the ⁶⁰Co source the light output of the LEDs and LDs was measured continuously. From time to time the authors also observed their emission spectrum. With the PDs they measured the preamplifier output during ⁶⁰Co irradiation as well as dark current and noise before and after irradiation. Determination of the sensitivity against neutrons was made off-line. After pulsed irradiation of PDs they measured how long a certain type of preamplifier was overdriven by the induced photocurrent

Keywords

X-ray effects; gamma-ray effects; light emitting diodes; neutron effects; photodiodes; semiconductor device testing; semiconductor lasers; 1 MeV; 10⁶ Gy; X-ray irradiation; dark current; emission spectrum; gamma-ray irradiation; induced photocurrent; laser diodes; light emitting diodes; light output; neutron irradiation; noise; photodiodes; preamplifier output; pulsed irradiation; radiation sensitivity; Dark current; Diode lasers; Light emitting diodes; Neutrons; Optical fiber couplers; Photodiodes; Power generation; Preamplifiers; Pulse measurements; Semiconductor diodes;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation and its Effects on Devices and Systems, 1991. RADECS 91., First European Conference on

Conference_Location

La Grande-Motte

Print_ISBN

0-7803-0208-7

Type

conf

DOI

10.1109/RADECS.1991.213565

Filename

213565