Thermally stimulated depolarization currents in Bi6Pb2O11

Author

Anisimova, N.I. ; Bordovsky, G.A. ; Bordovsky, V.A. ; Castro, R.A.

Author_Institution

Coll. of Phys., Herzen State Pedagogical Univ. of Russia, St. Petersburg

fYear

2008

fDate

15-17 Sept. 2008

Abstract

The present paper reports on the investigation of local states in Bi₆Pb₂O₁₁ band gap, which control charge carrier transport properties of this compound. Method of thermally stimulated depolarization currents (TSD) was used. The TSD curves are formed by 2-3 peaks at 246, 324 and 340 K. The number of peaks and their resolution depend greatly on polarization conditions (polarization field E_p and temperature of polarization T_p). The established residual polarization is due to hetero-charge formed, if only values of E_p do not exceed 5.10 V/m.

Keywords

bismuth compounds; energy gap; ionic conductivity; localised states; thermally stimulated currents; Bi₆Pb₂O₁₁; band gap; charge carrier transport; local states; temperature 246 K; temperature 324 K; temperature 340 K; thermally stimulated depolarization currents; Bismuth; Charge carriers; Conductivity; Educational institutions; Metastasis; Physics; Polarization; Temperature control; Temperature dependence; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrets, 2008. ISE-13. 13th International Symposium on

Conference_Location

Tokyo

Print_ISBN

978-1-4244-1850-3

Electronic_ISBN

978-1-4244-1851-0

Type

conf

DOI

10.1109/ISE.2008.4814105

Filename

4814105