Title :
Optimizing and controlling the radiation hardness of a CCD process
Author :
Wulf, F. ; Heyns, M. ; Debenest, P. ; Debusschere, I. ; Kelleher, A.
Author_Institution :
Hahn-Meitner-Inst. Berlin GmbH, Germany
Abstract :
The effect of the post-oxidation annealing temperatures (POA) in the range of 800°C to 950°C in N2 atmosphere and rapid thermal annealing (RTA) after source/drain implantation on the radiation hardness of a typical CCD process have been studied using MOS capacitors and transistors. The prompt and delayed generated/annealed density of oxide charges and interface states at annealing temperatures of 25°C and 100°C maintaining the same bias condition used during irradiation have been investigated. Negative bias temperature treatment at 200°C and an oxide field of -5 MV/cm have been performed to control the long-term stability of the different process variations
Keywords :
CCD image sensors; annealing; interface electron states; radiation hardening (electronics); rapid thermal processing; 100 C; 200 C; 25 C; 800 to 950 C; CCD process; MOS capacitors; MOS transistors; density of oxide charges; interface states; long-term stability; negative bias temperature treatment; post-oxidation annealing temperatures; radiation hardness; rapid thermal annealing; source/drain implantation; Atmosphere; Charge coupled devices; Delay; Interface states; MOS capacitors; MOSFETs; Rapid thermal annealing; Rapid thermal processing; Temperature control; Temperature distribution;
Conference_Titel :
Radiation and its Effects on Devices and Systems, 1991. RADECS 91., First European Conference on
Conference_Location :
La Grande-Motte
Print_ISBN :
0-7803-0208-7
DOI :
10.1109/RADECS.1991.213574
