DocumentCode
3148798
Title
Radiation effects on CCD
Author
Cluzel, J. ; Guiga, A. ; Tronel, R. ; Vilain, M. ; Vie, M. ; Azais, B. ; Baboulet, JP
Author_Institution
LETI/DOPT/ CENG, Grenoble, France
fYear
1991
fDate
9-12 Sep 1991
Firstpage
357
Lastpage
361
Abstract
Silicon Charge Couple Devices are the main components for visible and infrared imaging. The behaviour of these components has been studied under photon radiations (total dose and dose rate radiations) and neutron radiation. Infrared readout circuits have been tested in storage condition at 300 K and in operating condition at 77 K. The different simulation facilities, test facilities and main results are presented. This evaluation is the first step to hardening
Keywords
CCD image sensors; X-ray effects; infrared imaging; neutron effects; radiation hardening (electronics); 300 K; 77 K; CCD imagers; IR readout circuits; Si devices; dose rate radiations; hardening; infrared imaging; neutron radiation; photon radiations; radiation effects; simulation facilities; storage condition; test facilities; total dose; visible imaging; Charge coupled devices; Circuit simulation; Circuit testing; Coupling circuits; Infrared imaging; Neutrons; Radiation effects; Radiation hardening; Silicon; Test facilities;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and its Effects on Devices and Systems, 1991. RADECS 91., First European Conference on
Conference_Location
La Grande-Motte
Print_ISBN
0-7803-0208-7
Type
conf
DOI
10.1109/RADECS.1991.213575
Filename
213575
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