DocumentCode
3149010
Title
Study on ESD characteristics and its effect mechanism
Author
Shanghe, Liu ; Zhiliang, Tan ; Xiaoying, Xu ; Guanghui, Wei ; Wu Zhangcheng
Author_Institution
Shijiazhuang Mech. Eng. Coll., Inst. of Electrostatic & Electromagn. Protection, Hebei, China
fYear
2002
fDate
21-24 May 2002
Firstpage
493
Lastpage
496
Abstract
Based on experimental study on microcircuit and electric explosive device (EED) applied by electrostatic discharge (ESD), the characteristics and its electric conduction law of ESD are introduced. And it is shown that the generally accepted Ohm´s law is not followed at times under very high electrostatic field. In another words, ESD discharge curve is not an exponential decay one. ESD may form a hazard to microcircuit and EED. And its effect mechanism includes thermal effect of adiabatic process, electromagnetic interference from broadband electromagnetic radiation, overstress in high potential electrostatic field and field-caused breakdown effect etc. The failure rate may reach about 50% for unprotected MOS circuits and 10% for bipolar circuits due to general ESD hazards. The electrostatic ignition energy of EED is smaller with 2-3th power than that of the EED which is ignited through electrifying.
Keywords
electromagnetic interference; electrostatic discharge; ESD hazard; MOS circuit; adiabatic process; bipolar circuit; breakdown effect; broadband electromagnetic radiation; electric conduction; electric explosive device; electromagnetic interference; electrostatic discharge; electrostatic field; electrostatic ignition energy; failure rate; microcircuit; overstress; thermal effect; Biological system modeling; Circuits; Electric breakdown; Electrostatic discharge; Electrostatic interference; Fault location; Hazards; Materials science and technology; Microelectronics; Protection;
fLanguage
English
Publisher
ieee
Conference_Titel
Electromagnetic Compatibility, 2002 3rd International Symposium on
Print_ISBN
0-7803-7277-8
Type
conf
DOI
10.1109/ELMAGC.2002.1177478
Filename
1177478
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