A charge-conserving SOS MOSFET model including radiation effects for circuit simulation

Author

Howes, R. ; Redman-White, W. ; Nichols, K.G. ; Bird, S. ; Robinson, M. ; Mole, P.J.

Author_Institution

Dept. of Electron. & Comput. Sci., Southampton Univ., UK

fYear

1991

fDate

9-12 Sep 1991

Firstpage

150

Lastpage

154

Abstract

A circuit simulation model for SOS MOSFETs is presented which is valid from cutoff to strong inversion. The unique floating substrate effects are accounted for by modelling the substrate potential, making the model suitable for both digital as well as analogue circuit design. The model has been implemented in the SPICE2 program and sample simulation results are presented. Total dose radiation effects on threshold voltage and leakage current have also been included within the simulation environment

Keywords

MOS integrated circuits; SPICE; circuit CAD; insulated gate field effect transistors; radiation effects; semiconductor device models; SOS MOSFET model; SPICE2 program; analogue circuit design; circuit simulation; cutoff; digital circuit design; floating substrate effects; leakage current; radiation effects; strong inversion; substrate potential; threshold voltage; total dose radiation; Circuit optimization; Circuit simulation; Circuit synthesis; Dielectric substrates; Logic devices; Logic gates; MOSFET circuits; Radiation effects; SPICE; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation and its Effects on Devices and Systems, 1991. RADECS 91., First European Conference on

Conference_Location

La Grande-Motte

Print_ISBN

0-7803-0208-7

Type

conf

DOI

10.1109/RADECS.1991.213591

Filename

213591