Title :
Study of CMOS/SOS technology photocurrents
Author :
Saussine, J.D. ; Verbeck, C. ; Feuilloley, E. ; Michez, A. ; Bordure, G. ; Bruguier, G.
Author_Institution :
Dassault Electronique, Saint-Cloud, France
Abstract :
Presents the results of experiments and simulations performed on CMOS/SOS (Silicon On Sapphire) technology band systems exposed to transient irradiation. It describes some sapphire behaviors arising from the presence of a space charge zone which limits photocurrent
Keywords :
CMOS integrated circuits; integrated circuit technology; radiation effects; semiconductor process modelling; CMOS/SOS technology photocurrents; sapphire behaviors; space charge zone; transient irradiation; Aluminum; CMOS technology; Circuit testing; Performance evaluation; Photoconductivity; Semiconductor device measurement; Silicon; Software performance; Space charge; Wideband;
Conference_Titel :
Radiation and its Effects on Devices and Systems, 1991. RADECS 91., First European Conference on
Conference_Location :
La Grande-Motte
Print_ISBN :
0-7803-0208-7
DOI :
10.1109/RADECS.1991.213592
