DocumentCode
3149154
Title
Heavy ions sensitivity of power MOSFETs
Author
Tastet, P. ; Garnier, J.
Author_Institution
Centre National d´´Etudes Spatiales, Toulouse, France
fYear
1991
fDate
9-12 Sep 1991
Firstpage
138
Lastpage
142
Abstract
Power MOSFETs are now widely used in space applications. Their electrical characteristics: high switching capability, easy gate control, low losses, allows large gain in efficiency and mass of on-board power supplies. However, their heavy ions sensitivity may restrict their application. In order to quantify this sensitivity, the authors have characterized two technologies (standard and rad-hard) under different accelerators. They have performed two types of experiment: irradiation of the MOSFET in the off-state, static mode; and irradiation of the MOSFET in a switching converter
Keywords
insulated gate field effect transistors; ion beam effects; power convertors; power electronics; power transistors; efficiency; gate control; heavy ions sensitivity; losses; on-board power supplies; power MOSFETs; space applications; static mode; switching capability; switching converter; Control systems; Event detection; Licenses; MOSFETs; Radiation hardening; Rectifiers; Roentgenium; Space technology; System testing; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and its Effects on Devices and Systems, 1991. RADECS 91., First European Conference on
Conference_Location
La Grande-Motte
Print_ISBN
0-7803-0208-7
Type
conf
DOI
10.1109/RADECS.1991.213593
Filename
213593
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