Title :
Heavy ions sensitivity of power MOSFETs
Author :
Tastet, P. ; Garnier, J.
Author_Institution :
Centre National d´´Etudes Spatiales, Toulouse, France
Abstract :
Power MOSFETs are now widely used in space applications. Their electrical characteristics: high switching capability, easy gate control, low losses, allows large gain in efficiency and mass of on-board power supplies. However, their heavy ions sensitivity may restrict their application. In order to quantify this sensitivity, the authors have characterized two technologies (standard and rad-hard) under different accelerators. They have performed two types of experiment: irradiation of the MOSFET in the off-state, static mode; and irradiation of the MOSFET in a switching converter
Keywords :
insulated gate field effect transistors; ion beam effects; power convertors; power electronics; power transistors; efficiency; gate control; heavy ions sensitivity; losses; on-board power supplies; power MOSFETs; space applications; static mode; switching capability; switching converter; Control systems; Event detection; Licenses; MOSFETs; Radiation hardening; Rectifiers; Roentgenium; Space technology; System testing; Voltage;
Conference_Titel :
Radiation and its Effects on Devices and Systems, 1991. RADECS 91., First European Conference on
Conference_Location :
La Grande-Motte
Print_ISBN :
0-7803-0208-7
DOI :
10.1109/RADECS.1991.213593
