Title :
Radiation-induced effects on special super large n-channel power MOSFETS for space applications
Author :
Joseph, Haskel M.
Author_Institution :
Rockwell International, Canoga Park, CA, USA
Abstract :
Outlines the design, manufacture, and special processing techniques used to attain a solution to radiation-induced effects on super large N-channel power MOSFET dies, sizes 9 and 11, which are approximately 500×690 mils and 772×1022 mils, and still meet the critical and unique requirements of the remote power controller (RPC), the remote bus isolator (RBI), and, above all, the DC-to-DC converter (DDCU) for Space Station Freedom
Keywords :
insulated gate field effect transistors; power convertors; power electronics; power transistors; radiation effects; DC/DC convertor; Space Station Freedom; design; manufacture; n-channel power MOSFETS; processing techniques; radiation-induced effects; remote bus isolator; remote power controller; space applications; Circuits; Ionizing radiation; MOSFETs; Radiation hardening; Single event upset; Space stations; Space technology; Testing; Thermal resistance; Threshold voltage;
Conference_Titel :
Radiation and its Effects on Devices and Systems, 1991. RADECS 91., First European Conference on
Conference_Location :
La Grande-Motte
Print_ISBN :
0-7803-0208-7
DOI :
10.1109/RADECS.1991.213595
